Mohan  Kumar N

Mohan Kumar N

Professor, Electrical Electronics and Communication Engineering, GST, BLR

Education
Ph. D.
Email ID
mnagaraj2@gitam.edu
Education
Ph. D.

Education

Degree Name Institute & College name Year of Graduation/Award
NANO DEVICES JADAVPUR UNIVERSITY 2010
M.E JADAVPUR UNIVERSITY 2004
B.E Kongu Engineering College 2000

Experience

Designation Organization From Date To Date
PROFESSOR SKP ENGINEERING COLLEGE 29-09-2009 24-05-2019
LECTURER SREE RAMAKRISHNA INSTITUTE OF TECHNOLOGY 05-01-2005 23-12-2006
LECTURER JAYARAM COLLEGE OF ENGINEERING AND TECHNOLOGY 03-07-2000 03-01-2005

Awards

Award name Award Organization Awarded year
R10 SRC Vicechair IEEE Electron Devices Society 2018
Chair IEEE Electron Devices Society 2017
CAREER AWARD FOR YOUNG TEACHERS ALL INDIA COUNCIL OF TECHNICAL EDUCATION 2012
SENIOR RESEARCH FELLOW COUNCIL OF SCIENTIFIC AND INDUSTRIAL RESEARCH 2007

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and smallsignal model of quaternary AlInGaN HEMTs for microwave frequency applicationsInternational Journal of Numerical Modeling, Scopus, MAY-2019, 32, 01-18

Analytical Noise Characterization of Quaternary AlInGaN High Electron Mobility TransistorsJournal of Nanoelectronics and Optoelectronics, Scopus, MAY-2019, 14, 247-254

Sheetcarrier density and IV analysis of In0.7Ga0.3AsInAsIn0.7Ga0.3AsInAsIn0.7Ga0.3As dual channel double gate HEMT for THz applicationsInternational Journal of Numerical Modeling, Scopus, MAY-2019, 32, 01-13

Analysis of microwave noise in an enhancement mode dual quantum well InAs HEMTjournal of computational electronics, Scopus, JUN-2019, 18, 1280-1290

Analytical modeling of 2DEG and 2DHG charge balancing in quaternary Al0.42In0.03Ga0.55NAl0.3In0.7N HEMTsjournal of computational electronics, Scopus, APR-2018, 17, 1191-1198

Hetero Structure PNPN tunnel FET Analysis of ScalingEffects on Counter DopingApplied Surface Science, Scopus, -2018, 449, 823-828

Radiometric Analysis of Ankle Edema via RZF Antennafor Biomedical ApplicationsWireless Personal Communications, Google scholar, -2018, 102, 17851798

Comparative assessment of InGaAs subchannel and InAs composite channelDouble gate (DG)HEMT for submillimeter wave applicationsAEU International Journal of Electronics and Communications, Scopus, -2018, 83, 462-469

Noise characterization of enhancementmode AlGaN gradedbarrier MISHEMT devicesSuperlattices and Microstructures, Scopus, -2017, 112, 604-618

Investigation of 6T SRAM memory circuit using highk dielectrics based nano scale junctionless transistorSuperlattices and Microstructures, Scopus, -2017, 104, 470-476

Simulation of InGaAs Subchannel DGHEMTs foranalog RF applications International Journal of Electronics, Google scholar, -2017, 105, 446-456

In0.7Ga0.3AsInAsIn0.7Ga0.3As compositechannel doublegate(DG)HEMT devices for highfrequency applicationsJournal of Computational Electronics, Google scholar, -2017, 16, 732-740

Device characteristics of enhancement mode doubleheterostructure DHHEMT with borondoped GaNgate cap layer for fullbridge inverter circuitInternational Journal of Numerical Modelling, Google scholar, -2017, 31, 2276

Investigation of enhancement mode HfO2 insulated Npolarity GaNInNGaNIn0.9Al0.1N heterostructure MISHEMT for highfrequencyapplicationsPhysica E Lowdimensional Systems and Nanostructures, Google scholar, -2017, 92, 23-29

Analysis and Impact of Al mole concentration x in Double Heterojunction AlGaN with Source and Gate Field plated HEMT for High breakdown and High Frequency applicationsGlobal Journal of Pure and Applied Mathematics, Google scholar, -2017, 13, 7339-7352

A Charge Based Compact Physical Model with Unified 2DEG for AlGaNAlNGaNMISHEMTs including SCEsInternational Journal of Control Theory and Applications, Google scholar, -2017, 10, 0974-5572

Efficient IIINitride MISHEMT devices with high gate dielectric for highpowerswitching boost converter circuitsSuperlattices and Microstructures , Scopus, -2017, 103, 270-284

Void Aware Position Based Opportunistic Routing for QoS in Mobile Ad Hoc NetworksCircuits and Systems, Google scholar, -2016, 7, 1504-1521

SUBJECTIVE LOGIC BASED TRUST MODEL FOR GEOGRAPHIC ROUTING IN MOBILE AD HOC NETWORKSTehniki vjesnik, Google scholar, -2016, 23, 1357-1364

Steadfast Energy Proficient Sensor NodeActivation System in Wireless NetworksLifetime EnhancementCircuits and Systems, Google scholar, -2016, 7, 402-416

Context sensitive trust based geographic routing in mobile Adhoc networksSadhana Academy proceedings in engineering science, Google scholar, -2016, 41, 1261-1274

Network Capacity based Geographical Forwarding for Multimedia Streams over MANETsJournal of Internet Technology, Google scholar, -2016, 17, 431-441

Application of L NAM Speech in Voice AnalyserJournal of Advances in Natural and Applied Sciences, Google scholar, -2016, 10, 172-179

Analytical Model of Symmetric Halo Doped DGTunnel FETJournal of Engineering Science and Technology Review, Google scholar, -2015, 8, 125-130

Analysis of charge density and Fermi level of AlInSbInSb singlegate high electron mobilitytransistorJournal of Semiconductors, Google scholar, -2015, 36, 064003-1

Modeling of Sheet Carrier Density, DC and Transconductance of NovelInxAl1XNGaNBased HEMT StructuresAdvanced Materials Research, Google scholar, -2015, 1105, 99-104

Threading Dislocation Degradation of InSb to InAsSb Subchannel DoubleHeterostructuresElectronic Materials Letters, Google scholar, -2015, 11, 580-585

A New Threshold Voltage and Drain Current Model forLightlyHeavily Doped Surrounding Gate MOSFETsJournal of Computational and Theoretical Nanoscience, Google scholar, -2015, 12, 25152522

Unique model of polarization engineeredAlGaNGaN based HEMTs for high powerapplicationsSuperlattices and Microstructures, Google scholar, -2015, 78, 210-223

Polarization and Breakdown Analysis ofAlGaN Channel HEMTs with AlN BufferWorld Journal of Condensed Matter Physics, Google scholar, -2015, 5, 232-243

The influence of highk passivation layer on breakdown voltage of Schottky AlGaN GaN HEMTsMicroelectronics Journal, Scopus, -2015, 46, 1387-1391

A 2D surface potential based threshold voltage model for short channel asymmetric heavily doped DG MOSFETsINTERNATIONAL JOURNAL OF NUMERICAL MODELLING, Google scholar, -2014, 27, 682-690

MULTILEVEL TRUST ARCHITECTURE FOR MOBILEADHOC NETWORKS BASED ON CONTEXTAWAREJournal of Theoretical and Applied Information Technology, Google scholar, -2014, 59, 0

WIRELESS VIDEO TRANSMISSION OVER UWB CHANNELUSING FUZZY BASED RATE CONTROL TECHNIQUEJournal of Theoretical and Applied Information Technology, Google scholar, -2014, 60, 0

Modeling of Temperature Dependent Noise in Silicon Nanowire FETs including Self Heating EffectsModelling and Simulation in Engineering, Google scholar, -2014, 2014, 7

A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconiumdi Oxide DielectricsJournal of Engineering Science and Technology Review, Google scholar, -2014, 7, 119-124

Simulation of flicker noise in gateallaround Silicon Nanowire MOSFETsincluding interface trapsMicroelectronics Reliability, Scopus, -2014, 54, 2723-2727

Optimization and Characterization of Gate Electrode Dependent FlickerNoise in Silicon Nanowire TransistorsJournal of Electrical Engineering and Technology, Google scholar, -2014, 9, 1343-1348

An effective stateless QoS routing for multimediaapplications in MANETInt. J. Wireless and Mobile Computing, Google scholar, -2014, 7, 456-464

Modeling of sheet carrier density and microwave frequencycharacteristics in Spacer based AlGaNAlNGaN HEMT devicesSolidState Electronics, Scopus, -2014, 91, 44-52

Study of body and oxide thickness variation on analog and RF performance of underlap DGMOSFETsMicroelectronics Reliability, Scopus, -2014, 54, 1137-1142

An Optimal Cluster Head Selection Technique Adopted Node Activation Protocol for Lifetime Improvement in Wireless sensor NetworksInternational Review on Computers and Software, Google scholar, -2013, 8, 0

Flicker and thermal noise in an nchannel underlap DG FinFET in a weak inversion regionJournal of Semiconductors, Google scholar, -2013, 34, 7

Impact of gate length and barrier thickness onperformance of InPInGaAs based Double GateMetalOxideSemiconductor HeterostructureFieldEffect Transistor (DG MOSHFET)Superlattices and Microstructures, Scopus, -2013, 55, 8-15

Polarization based charge density drain current andsmallsignalmodel for nanoscale AlInGaNAlNGaNHEMT devicesSuperlattices and Microstructures, Scopus, -2013, 54, 188-203

Subthreshold performance of gate engineered FinFET devices and circuit with highk dielectricsMicroelectronics Reliability, Scopus, -2013, 53, 499-504

Modeling of 2DEG sheet carrier density and DCcharacteristics in spacer based AlGaNAlNGaNHEMT devicesSuperlattices and Microstructures, Scopus, -2013, 64, 470-482

Influence of barrier thickness on AlInN GaN underlap DG MOSFET device performanceSuperlattices and Microstructures, Scopus, -2013, 60, 47-59

Proficient Node Scheduling Protocol for Homogeneous and Heterogeneous Wireless Sensor NetworksInternational Journal of Distributed Sensor Networks, Google scholar, -2013, 2013, 8

Performance assessment of gate material engineered AlInNGaN underlap DG MOSFET for enhanced carrier transport efficiencySuperlattices and Microstructures, Scopus, -2013, 60, 10-22

A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nanoscale AlInGaNAlNGaN HEMT devicesJournal of Semiconductors, Google scholar, -2013, 34, 044002

Nanoscale channel engineered double gate MOSFET for mixedsignal applications using highk dielectricInternational Journal of Circuit Theory and Applications, Google scholar, -2012, 2012, 9

PHYSICS BASED CHARGE AND DRAIN CURRENT MODEL FORAlGaNGaN HEMT DEVICESJournal of Electron Devices, Google scholar, -2012, 14, 1155-1160

Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in IIIV heterostructure underlap DG MOSFETPhysica E, Scopus, -2012, 46, 61-67

Comparative assessment of IIIV heterostructure and silicon underlap double gate MOSFETsSemiconductors, Google scholar, -2012, 46, 1299-1303

Subthreshold analysis of nanoscaleFinFETs for ultra low power applicationusing highk materialsInternational Journal of Electronics, Google scholar, -2012, 100, 803-817

Subthreshold analogRF performance of underlap DG FETs with asymmetric sourcedrain extensionsMicroelectronics Reliability, Scopus, -2012, 52, 2572-2578

Effect of underlap and gate length on device performance of an AlInNGaN underlap MOSFETJournal of Semiconductors, Google scholar, -2012, 33, 124001

A surface potential based drain current model for asymmetric double gate MOSFETsSolidState Electronics, Scopus, -2011, 56, 148-154

Influence of Channel and Gate Engineering on theAnalog and RF Performance of DG MOSFETsIEEE TRANSACTIONS ON ELECTRON DEVICES, Google scholar, -2010, 57, 820-826

Investigation of novel attributes of single halo dualmaterial double gateMOSFETs for analogRF applicationsMicroelectronics Reliability, Google scholar, -2009, 49, 1491-1497

Performance and optimisation of dual material gate short channel BULK MOSFETs for analoguemixed signal applicationsInternational Journal of Electronics, Google scholar, -2009, 96, 603-311

Title of the book Book / Chapter Name of the publisher Subject area Edition Page numbers ISBN Published year
Technology Computer Aided Design Simulation for VLSI MOSFET Chapters CRC Press, Taylor & Francis Group TCAD 1 155-186 9781138075757 2013
Board name Journal name
Journal of Microelectronics and Solid State devices STM Journals
Board name Journal name
Taylor & Francis International Journal of Electronics
ELSEVIER Micro Electronics Reliability Journal
ELSEVIER Solid State Circuits Journal
ELSEVIER Micro Electronics ( ELSEVIER)
ELSEVIER Journal of Super Lattices and Semi Conductors ( ELSEVIER)
IEEE IEEE Transaction on Electron Devices and Electron Device Letters.
Seminar name Organized by Venue Start date End date Title of the paper presented Role Co presenter
National VIT UNIVERSITY VIT UNIVERSITY 08-Oct-2009 10-Oct-2009 Participated
National IEEE CHETTINAD COLLEGE OF ENGINEERING 18-Dec-2008 20-Dec-2008 Participated
Seminar name Organized by Venue Start date End date Title of the paper presented Role Co presenter
International SCIENCE AND ENGINEERING INSTITUTE DOHA, QATAR 07-Jan-2015 08-Jan-2015 Participated
Title of the thesis Name of the student Name of the college / university Major subject area Year of admission Type of admission Thesis specification
Title of the thesis Name of the student Name of the college / university Major subject area Year of admission Type of admission Thesis specification
Title of the thesis Name of the student Name of the college / university Major subject area Year of admission Type of admission Thesis specification
Modeling and Simulation of GaN Based HEMTs for High frequency and High Power Applications S.Baskaran ANNA UNIVERSITY INFORMATION AND COMMUNICATION ENGINEERING 2018 Full time PhD
An Intelligent Indian Sign Language Recognition system with Hybrid Classification Approach Using Hand Gesture Images and NAM Speech Signal M.Suresh Anand ANNA UNIVERSITY INFORMATION AND COMMUNICATION ENGINEERING 2018 Full time PhD
Developing Hybrid Tamil Speech Recognition Engine (TSRE) for Partial Speech by Extracting NAM Signal and Normal Microphone Signal A.Kumaresan ANNA UNIVERSITY INFORMATION AND COMMUNICATION ENGINEERING 2018 Full time PhD
Performance Analysis Of III V Compound Semiconductor Based DG HEMT Devices For High Frequency Applications R. Saravanakumar ANNA UNIVERSITY INFORMATION AND COMMUNICATION ENGINEERING 2018 Full time PhD
Advanced IIIV Heterostructure Quantum Well Devices With Enhancement Mode (E Mode) Operation For High Power Switching, AnalogRF Applications A. Mohanbabu ANNA UNIVERSITY INFORMATION AND COMMUNICATION ENGINEERING 2018 Full time PhD
Network Capacity based Geographical Forwarding for Multimedia Stream over MANETs V.Raji JADAVPUR UNIVERSITY FACULTY OF ENGINEERING 2017 Full time PhD
Towards Context Aware Position Based Trusted Routing Techniques For Mobile AdHoc Networks E.Rajesh ANNA UNIVERSITY INFORMATION AND COMMUNICATION ENGINEERING 2017 Full time PhD
Advanced Heterostructure devices for Power Applications D.Godwin Raj JADAVPUR UNIVERSITY FACULTY OF ENGINEERING 2016 Full time PhD
Effects of Noise on the Performance of Silicon Nanowire Transistors P.Anandan ANNA UNIVERSITY INSTRUMENTATION AND CONTROL ENGINEERING 2015 Full time PhD
Analysis of Heterostructure Based Nano MOS Devices HemantPardesi JADAVPUR UNIVERSITY FACULTY OF ENGINEERING 2015 Full time PhD
Studies on Advanced MOS Devices for RF application Sudhansu K Pati JADAVPUR UNIVERSITY FACULTY OF ENGINEERING 2015 Full time PhD
Ingenious Energy Competent Routing Protocols For Wireless Sensor Networks To Enhance The Network Lifespan R.Saravanakumar ANNA UNIVERSITY INSTRUMENTATION AND CONTROL ENGINEERING 2014 Full time PhD
Name of the award Awarded by Awarded year
CAREER AWARD FOR YOUNG TEACHER AICTE 2012
Title Type Organized by Venue Start date End date Role
VLSI DESIGN Training of tutors BANNARI AMMAN INSTITUTE OF TECHNOLOGY BANNARI AMMAN INSTITUTE OF TECHNOLOGY 07-Oct-2005 08-Oct-2005 Participated
PRINTED CIRCUIT BOARD Training of tutors LIFE LINE CIRCUITS PVT LTD HOSUR 02-Jul-2002 09-Jul-2002 Participated
Title Type Organized by Venue Start date End date Role
Nanomaterials CMOS technology Training of tutors IEEE EDS KOLKATA JADAVPUR UNIVERSITY 06-Mar-2008 08-Mar-2008 Participated
Organization name Membership category Membership type
Institute of electrical & Electronics engineers Individual Member
Title Application number Category Submitted date
AN INTELLIGENT INDIAN SIGN LANGUAGE RECOGNITION SYSTEM WITH HYBRID CLASSIFICATION APPROACH USING HAND GESTURE IMAGES AND NAM SPEECH SIGNAL 201741036635 Indian 28 Sep, 2017
Title Application number Category Submitted date
Title Application number Category Submitted date