Faculty Profile
Mohan Kumar N
Professor, Electrical Electronics and Communication Engineering, GST, BLR
Education
Ph. D.Email ID
mnagaraj2@gitam.edu
Education
Ph. D.Education
| Degree Name | Institute & College name | Year of Graduation/Award |
|---|---|---|
| NANO DEVICES | JADAVPUR UNIVERSITY | 2010 |
| M.E | JADAVPUR UNIVERSITY | 2004 |
| B.E | Kongu Engineering College | 2000 |
Experience
| Designation | Organization | From Date | To Date |
|---|---|---|---|
| PROFESSOR | SKP ENGINEERING COLLEGE | 29-09-2009 | 24-05-2019 |
| LECTURER | SREE RAMAKRISHNA INSTITUTE OF TECHNOLOGY | 05-01-2005 | 23-12-2006 |
| LECTURER | JAYARAM COLLEGE OF ENGINEERING AND TECHNOLOGY | 03-07-2000 | 03-01-2005 |
Awards
| Award name | Award Organization | Awarded year |
|---|---|---|
| R10 SRC Vicechair | IEEE Electron Devices Society | 2018 |
| Chair | IEEE Electron Devices Society | 2017 |
| CAREER AWARD FOR YOUNG TEACHERS | ALL INDIA COUNCIL OF TECHNICAL EDUCATION | 2012 |
| SENIOR RESEARCH FELLOW | COUNCIL OF SCIENTIFIC AND INDUSTRIAL RESEARCH | 2007 |
Analytical modeling of 2DEG with 2DHG polarization charge density drain current and smallsignal model of quaternary AlInGaN HEMTs for microwave frequency applicationsInternational Journal of Numerical Modeling, Scopus, MAY-2019, 32, 01-18
Analytical Noise Characterization of Quaternary AlInGaN High Electron Mobility TransistorsJournal of Nanoelectronics and Optoelectronics, Scopus, MAY-2019, 14, 247-254
Sheetcarrier density and IV analysis of In0.7Ga0.3AsInAsIn0.7Ga0.3AsInAsIn0.7Ga0.3As dual channel double gate HEMT for THz applicationsInternational Journal of Numerical Modeling, Scopus, MAY-2019, 32, 01-13
Analysis of microwave noise in an enhancement mode dual quantum well InAs HEMTjournal of computational electronics, Scopus, JUN-2019, 18, 1280-1290
Analytical modeling of 2DEG and 2DHG charge balancing in quaternary Al0.42In0.03Ga0.55NAl0.3In0.7N HEMTsjournal of computational electronics, Scopus, APR-2018, 17, 1191-1198
Hetero Structure PNPN tunnel FET Analysis of ScalingEffects on Counter DopingApplied Surface Science, Scopus, -2018, 449, 823-828
Radiometric Analysis of Ankle Edema via RZF Antennafor Biomedical ApplicationsWireless Personal Communications, Google scholar, -2018, 102, 17851798
Comparative assessment of InGaAs subchannel and InAs composite channelDouble gate (DG)HEMT for submillimeter wave applicationsAEU International Journal of Electronics and Communications, Scopus, -2018, 83, 462-469
Noise characterization of enhancementmode AlGaN gradedbarrier MISHEMT devicesSuperlattices and Microstructures, Scopus, -2017, 112, 604-618
Investigation of 6T SRAM memory circuit using highk dielectrics based nano scale junctionless transistorSuperlattices and Microstructures, Scopus, -2017, 104, 470-476
Simulation of InGaAs Subchannel DGHEMTs foranalog RF applications International Journal of Electronics, Google scholar, -2017, 105, 446-456
In0.7Ga0.3AsInAsIn0.7Ga0.3As compositechannel doublegate(DG)HEMT devices for highfrequency applicationsJournal of Computational Electronics, Google scholar, -2017, 16, 732-740
Device characteristics of enhancement mode doubleheterostructure DHHEMT with borondoped GaNgate cap layer for fullbridge inverter circuitInternational Journal of Numerical Modelling, Google scholar, -2017, 31, 2276
Investigation of enhancement mode HfO2 insulated Npolarity GaNInNGaNIn0.9Al0.1N heterostructure MISHEMT for highfrequencyapplicationsPhysica E Lowdimensional Systems and Nanostructures, Google scholar, -2017, 92, 23-29
Analysis and Impact of Al mole concentration x in Double Heterojunction AlGaN with Source and Gate Field plated HEMT for High breakdown and High Frequency applicationsGlobal Journal of Pure and Applied Mathematics, Google scholar, -2017, 13, 7339-7352
A Charge Based Compact Physical Model with Unified 2DEG for AlGaNAlNGaNMISHEMTs including SCEsInternational Journal of Control Theory and Applications, Google scholar, -2017, 10, 0974-5572
Efficient IIINitride MISHEMT devices with high gate dielectric for highpowerswitching boost converter circuitsSuperlattices and Microstructures , Scopus, -2017, 103, 270-284
Void Aware Position Based Opportunistic Routing for QoS in Mobile Ad Hoc NetworksCircuits and Systems, Google scholar, -2016, 7, 1504-1521
SUBJECTIVE LOGIC BASED TRUST MODEL FOR GEOGRAPHIC ROUTING IN MOBILE AD HOC NETWORKSTehniki vjesnik, Google scholar, -2016, 23, 1357-1364
Steadfast Energy Proficient Sensor NodeActivation System in Wireless NetworksLifetime EnhancementCircuits and Systems, Google scholar, -2016, 7, 402-416
Context sensitive trust based geographic routing in mobile Adhoc networksSadhana Academy proceedings in engineering science, Google scholar, -2016, 41, 1261-1274
Network Capacity based Geographical Forwarding for Multimedia Streams over MANETsJournal of Internet Technology, Google scholar, -2016, 17, 431-441
Application of L NAM Speech in Voice AnalyserJournal of Advances in Natural and Applied Sciences, Google scholar, -2016, 10, 172-179
Analytical Model of Symmetric Halo Doped DGTunnel FETJournal of Engineering Science and Technology Review, Google scholar, -2015, 8, 125-130
Analysis of charge density and Fermi level of AlInSbInSb singlegate high electron mobilitytransistorJournal of Semiconductors, Google scholar, -2015, 36, 064003-1
Modeling of Sheet Carrier Density, DC and Transconductance of NovelInxAl1XNGaNBased HEMT StructuresAdvanced Materials Research, Google scholar, -2015, 1105, 99-104
Threading Dislocation Degradation of InSb to InAsSb Subchannel DoubleHeterostructuresElectronic Materials Letters, Google scholar, -2015, 11, 580-585
A New Threshold Voltage and Drain Current Model forLightlyHeavily Doped Surrounding Gate MOSFETsJournal of Computational and Theoretical Nanoscience, Google scholar, -2015, 12, 25152522
Unique model of polarization engineeredAlGaNGaN based HEMTs for high powerapplicationsSuperlattices and Microstructures, Google scholar, -2015, 78, 210-223
Polarization and Breakdown Analysis ofAlGaN Channel HEMTs with AlN BufferWorld Journal of Condensed Matter Physics, Google scholar, -2015, 5, 232-243
The influence of highk passivation layer on breakdown voltage of Schottky AlGaN GaN HEMTsMicroelectronics Journal, Scopus, -2015, 46, 1387-1391
A 2D surface potential based threshold voltage model for short channel asymmetric heavily doped DG MOSFETsINTERNATIONAL JOURNAL OF NUMERICAL MODELLING, Google scholar, -2014, 27, 682-690
MULTILEVEL TRUST ARCHITECTURE FOR MOBILEADHOC NETWORKS BASED ON CONTEXTAWAREJournal of Theoretical and Applied Information Technology, Google scholar, -2014, 59, 0
WIRELESS VIDEO TRANSMISSION OVER UWB CHANNELUSING FUZZY BASED RATE CONTROL TECHNIQUEJournal of Theoretical and Applied Information Technology, Google scholar, -2014, 60, 0
Modeling of Temperature Dependent Noise in Silicon Nanowire FETs including Self Heating EffectsModelling and Simulation in Engineering, Google scholar, -2014, 2014, 7
A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconiumdi Oxide DielectricsJournal of Engineering Science and Technology Review, Google scholar, -2014, 7, 119-124
Simulation of flicker noise in gateallaround Silicon Nanowire MOSFETsincluding interface trapsMicroelectronics Reliability, Scopus, -2014, 54, 2723-2727
Optimization and Characterization of Gate Electrode Dependent FlickerNoise in Silicon Nanowire TransistorsJournal of Electrical Engineering and Technology, Google scholar, -2014, 9, 1343-1348
An effective stateless QoS routing for multimediaapplications in MANETInt. J. Wireless and Mobile Computing, Google scholar, -2014, 7, 456-464
Modeling of sheet carrier density and microwave frequencycharacteristics in Spacer based AlGaNAlNGaN HEMT devicesSolidState Electronics, Scopus, -2014, 91, 44-52
Study of body and oxide thickness variation on analog and RF performance of underlap DGMOSFETsMicroelectronics Reliability, Scopus, -2014, 54, 1137-1142
An Optimal Cluster Head Selection Technique Adopted Node Activation Protocol for Lifetime Improvement in Wireless sensor NetworksInternational Review on Computers and Software, Google scholar, -2013, 8, 0
Flicker and thermal noise in an nchannel underlap DG FinFET in a weak inversion regionJournal of Semiconductors, Google scholar, -2013, 34, 7
Impact of gate length and barrier thickness onperformance of InPInGaAs based Double GateMetalOxideSemiconductor HeterostructureFieldEffect Transistor (DG MOSHFET)Superlattices and Microstructures, Scopus, -2013, 55, 8-15
Polarization based charge density drain current andsmallsignalmodel for nanoscale AlInGaNAlNGaNHEMT devicesSuperlattices and Microstructures, Scopus, -2013, 54, 188-203
Subthreshold performance of gate engineered FinFET devices and circuit with highk dielectricsMicroelectronics Reliability, Scopus, -2013, 53, 499-504
Modeling of 2DEG sheet carrier density and DCcharacteristics in spacer based AlGaNAlNGaNHEMT devicesSuperlattices and Microstructures, Scopus, -2013, 64, 470-482
Influence of barrier thickness on AlInN GaN underlap DG MOSFET device performanceSuperlattices and Microstructures, Scopus, -2013, 60, 47-59
Proficient Node Scheduling Protocol for Homogeneous and Heterogeneous Wireless Sensor NetworksInternational Journal of Distributed Sensor Networks, Google scholar, -2013, 2013, 8
Performance assessment of gate material engineered AlInNGaN underlap DG MOSFET for enhanced carrier transport efficiencySuperlattices and Microstructures, Scopus, -2013, 60, 10-22
A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nanoscale AlInGaNAlNGaN HEMT devicesJournal of Semiconductors, Google scholar, -2013, 34, 044002
Nanoscale channel engineered double gate MOSFET for mixedsignal applications using highk dielectricInternational Journal of Circuit Theory and Applications, Google scholar, -2012, 2012, 9
PHYSICS BASED CHARGE AND DRAIN CURRENT MODEL FORAlGaNGaN HEMT DEVICESJournal of Electron Devices, Google scholar, -2012, 14, 1155-1160
Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in IIIV heterostructure underlap DG MOSFETPhysica E, Scopus, -2012, 46, 61-67
Comparative assessment of IIIV heterostructure and silicon underlap double gate MOSFETsSemiconductors, Google scholar, -2012, 46, 1299-1303
Subthreshold analysis of nanoscaleFinFETs for ultra low power applicationusing highk materialsInternational Journal of Electronics, Google scholar, -2012, 100, 803-817
Subthreshold analogRF performance of underlap DG FETs with asymmetric sourcedrain extensionsMicroelectronics Reliability, Scopus, -2012, 52, 2572-2578
Effect of underlap and gate length on device performance of an AlInNGaN underlap MOSFETJournal of Semiconductors, Google scholar, -2012, 33, 124001
A surface potential based drain current model for asymmetric double gate MOSFETsSolidState Electronics, Scopus, -2011, 56, 148-154
Influence of Channel and Gate Engineering on theAnalog and RF Performance of DG MOSFETsIEEE TRANSACTIONS ON ELECTRON DEVICES, Google scholar, -2010, 57, 820-826
Investigation of novel attributes of single halo dualmaterial double gateMOSFETs for analogRF applicationsMicroelectronics Reliability, Google scholar, -2009, 49, 1491-1497
Performance and optimisation of dual material gate short channel BULK MOSFETs for analoguemixed signal applicationsInternational Journal of Electronics, Google scholar, -2009, 96, 603-311
| Title of the book | Book / Chapter | Name of the publisher | Subject area | Edition | Page numbers | ISBN | Published year |
|---|---|---|---|---|---|---|---|
| Technology Computer Aided Design Simulation for VLSI MOSFET | Chapters | CRC Press, Taylor & Francis Group | TCAD | 1 | 155-186 | 9781138075757 | 2013 |
| Board name | Journal name |
|---|---|
| Journal of Microelectronics and Solid State devices | STM Journals |
| Board name | Journal name |
|---|---|
| Taylor & Francis | International Journal of Electronics |
| ELSEVIER | Micro Electronics Reliability Journal |
| ELSEVIER | Solid State Circuits Journal |
| ELSEVIER | Micro Electronics ( ELSEVIER) |
| ELSEVIER | Journal of Super Lattices and Semi Conductors ( ELSEVIER) |
| IEEE | IEEE Transaction on Electron Devices and Electron Device Letters. |
| Seminar name | Organized by | Venue | Start date | End date | Title of the paper presented | Role | Co presenter |
|---|---|---|---|---|---|---|---|
| National | VIT UNIVERSITY | VIT UNIVERSITY | 08-Oct-2009 | 10-Oct-2009 | Participated | ||
| National | IEEE | CHETTINAD COLLEGE OF ENGINEERING | 18-Dec-2008 | 20-Dec-2008 | Participated |
| Seminar name | Organized by | Venue | Start date | End date | Title of the paper presented | Role | Co presenter |
|---|---|---|---|---|---|---|---|
| International | SCIENCE AND ENGINEERING INSTITUTE | DOHA, QATAR | 07-Jan-2015 | 08-Jan-2015 | Participated |
| Title of the thesis | Name of the student | Name of the college / university | Major subject area | Year of admission | Type of admission | Thesis specification |
|---|
| Title of the thesis | Name of the student | Name of the college / university | Major subject area | Year of admission | Type of admission | Thesis specification |
|---|
| Title of the thesis | Name of the student | Name of the college / university | Major subject area | Year of admission | Type of admission | Thesis specification |
|---|---|---|---|---|---|---|
| Modeling and Simulation of GaN Based HEMTs for High frequency and High Power Applications | S.Baskaran | ANNA UNIVERSITY | INFORMATION AND COMMUNICATION ENGINEERING | 2018 | Full time | PhD |
| An Intelligent Indian Sign Language Recognition system with Hybrid Classification Approach Using Hand Gesture Images and NAM Speech Signal | M.Suresh Anand | ANNA UNIVERSITY | INFORMATION AND COMMUNICATION ENGINEERING | 2018 | Full time | PhD |
| Developing Hybrid Tamil Speech Recognition Engine (TSRE) for Partial Speech by Extracting NAM Signal and Normal Microphone Signal | A.Kumaresan | ANNA UNIVERSITY | INFORMATION AND COMMUNICATION ENGINEERING | 2018 | Full time | PhD |
| Performance Analysis Of III V Compound Semiconductor Based DG HEMT Devices For High Frequency Applications | R. Saravanakumar | ANNA UNIVERSITY | INFORMATION AND COMMUNICATION ENGINEERING | 2018 | Full time | PhD |
| Advanced IIIV Heterostructure Quantum Well Devices With Enhancement Mode (E Mode) Operation For High Power Switching, AnalogRF Applications | A. Mohanbabu | ANNA UNIVERSITY | INFORMATION AND COMMUNICATION ENGINEERING | 2018 | Full time | PhD |
| Network Capacity based Geographical Forwarding for Multimedia Stream over MANETs | V.Raji | JADAVPUR UNIVERSITY | FACULTY OF ENGINEERING | 2017 | Full time | PhD |
| Towards Context Aware Position Based Trusted Routing Techniques For Mobile AdHoc Networks | E.Rajesh | ANNA UNIVERSITY | INFORMATION AND COMMUNICATION ENGINEERING | 2017 | Full time | PhD |
| Advanced Heterostructure devices for Power Applications | D.Godwin Raj | JADAVPUR UNIVERSITY | FACULTY OF ENGINEERING | 2016 | Full time | PhD |
| Effects of Noise on the Performance of Silicon Nanowire Transistors | P.Anandan | ANNA UNIVERSITY | INSTRUMENTATION AND CONTROL ENGINEERING | 2015 | Full time | PhD |
| Analysis of Heterostructure Based Nano MOS Devices | HemantPardesi | JADAVPUR UNIVERSITY | FACULTY OF ENGINEERING | 2015 | Full time | PhD |
| Studies on Advanced MOS Devices for RF application | Sudhansu K Pati | JADAVPUR UNIVERSITY | FACULTY OF ENGINEERING | 2015 | Full time | PhD |
| Ingenious Energy Competent Routing Protocols For Wireless Sensor Networks To Enhance The Network Lifespan | R.Saravanakumar | ANNA UNIVERSITY | INSTRUMENTATION AND CONTROL ENGINEERING | 2014 | Full time | PhD |
| Name of the award | Awarded by | Awarded year |
|---|---|---|
| CAREER AWARD FOR YOUNG TEACHER | AICTE | 2012 |
| Title | Type | Organized by | Venue | Start date | End date | Role |
|---|---|---|---|---|---|---|
| VLSI DESIGN | Training of tutors | BANNARI AMMAN INSTITUTE OF TECHNOLOGY | BANNARI AMMAN INSTITUTE OF TECHNOLOGY | 07-Oct-2005 | 08-Oct-2005 | Participated |
| PRINTED CIRCUIT BOARD | Training of tutors | LIFE LINE CIRCUITS PVT LTD | HOSUR | 02-Jul-2002 | 09-Jul-2002 | Participated |
| Title | Type | Organized by | Venue | Start date | End date | Role |
|---|---|---|---|---|---|---|
| Nanomaterials CMOS technology | Training of tutors | IEEE EDS KOLKATA | JADAVPUR UNIVERSITY | 06-Mar-2008 | 08-Mar-2008 | Participated |
| Organization name | Membership category | Membership type |
|---|---|---|
| Institute of electrical & Electronics engineers | Individual | Member |
| Title | Application number | Category | Submitted date |
|---|---|---|---|
| AN INTELLIGENT INDIAN SIGN LANGUAGE RECOGNITION SYSTEM WITH HYBRID CLASSIFICATION APPROACH USING HAND GESTURE IMAGES AND NAM SPEECH SIGNAL | 201741036635 | Indian | 28 Sep, 2017 |
| Title | Application number | Category | Submitted date |
|---|
| Title | Application number | Category | Submitted date |
|---|